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 Wysłany: Nie 22:39, 16 Sty 2011 Temat postu: moncler günstig Patent Information (Ⅰ) _2 |
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Patent Information (Ⅰ)
Meta / s (rare), 1993,[link widoczny dla zalogowanych],17 (2): 128 ~ 133ApplicationofHighPurityTitaniumandMethodstoProduceItLiuZhenghong, ChenZhiqiang (The725ResearchInstitute, ChianHeavyIndustryGroup, Luoyang471039, China) Abstract: TheapplicationofHighPurityTitaniumareintroducedindetail, alsothemethodstoproduceit, whichincludesKrollProcess, IodineProcess,[link widoczny dla zalogowanych], Molten-saltElectrolysisandElectronBeamRefining, isintroduced. Atlastthispaperindicatesthatthecombinationofsomemethodsisthebestapproachofobtaininghighpuritytitanium, andthedevelopmentofnewmethodsieneficialtoreductionofcomplexityofprocess. Keywords: highpuritytitanium; krollprocess; iodineprocess; molten-saltelectrolysis; electronbeamrefiningBiography: LiuZhenghong, CandidateforMaster, The725ResearchInstitute,[link widoczny dla zalogowanych], ChinaHeavyIndustryGroup,[link widoczny dla zalogowanych], Luoyang471039, P. R. China, rel: 0086_379-67325019, E-mail: brandonliu @ tom. com Lu Patent Title: A method of preparing GaN single crystal substrate patent number: 200610144316.3 filing date :2006-12-01 Open Number: CN1996556 open at :2007-07-11 patent applicants: Peking University The invention provides a method of preparing GaN single crystal substrate, is the field of optoelectronic materials and devices. The method includes: the sapphire substrate using heterogeneous technologies such as MOCVD or MBE growth of high-quality follow-up to the growth of GaN film as a template, within the thickness of 10m; in the GaN template prepared by a weak bond and the flexible layer; using conventional The HVPE GaN template method in rapid growth of GaN single crystal thick films. By reducing the stress between the GaN and the substrate effect, you can get low dislocation density GaN epitaxial layer to prevent the thick crack, get high-quality GaN materials. When the thickness is 0.1mm thick GaN single crystal above, in the cooling process to make thick GaN single crystal GaN template automatically separated from the obtained GaN single crystal thick film. The invention utilizes a weak connection methods, improving the crystal quality, so thick GaN single crystal substrate and the heterogeneity between the automatic separation, direct access to GaN single crystal substrate. Patent Name: A rare earth oxides prepared by homogeneous precipitation method patent number: 200610080668.7 filing date :2006 -05-25 open No.: CN101077790 open at :2007-11-28 patent applicants: Beijing Founder Rare Earth Science and Technology Research Institute Co.,[link widoczny dla zalogowanych], Ltd.; Peking University; Peking University Founder Group Co., Ltd. The present invention discloses a rare earth oxides prepared by homogeneous precipitation method. Rare earth salt solution of the invention as raw materials, using urea as precipitating agent, the use of urease in the 0 ~ 80 ℃ catalyzed hydrolysis of urea under the conditions, prepared by homogeneous precipitation of rare earth oxide precursor, filtration, drying, burning after too rare earth oxides. As a result of the present invention enzyme induced homogeneous precipitation method, the reaction can be carried out at low temperature, saving energy, while the rare earth oxides are the precursor particles uniform and dense, low absorption of impurities, easy filtering and washing the crystal precipitation.
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